Invention Grant
- Patent Title: Capacitor and method for fabricating the same
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Application No.: US16666478Application Date: 2019-10-29
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Publication No.: US10910158B2Publication Date: 2021-02-02
- Inventor: Bin Lu , Jian Shen
- Applicant: SHENZHEN WEITONGBO TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN WEITONGBO TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN WEITONGBO TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Main IPC: H01G4/01
- IPC: H01G4/01 ; H01L21/768 ; H01L21/306 ; H01L49/02

Abstract:
A capacitor and a method of fabricating the capacitor are provided. The capacitor includes a structure for forming a three-dimensional capacitor, the structure being a pillar structure or a trench structure; where when the structure is a pillar structure, the aspect ratio of the pillar structure is more than 10; when the structure is a trench structure, the capacitor further includes a substrate, the trench structure is formed by a material layer disposed on the surface of a base trench of the substrate, and the aspect ratio of the trench structure is more than 10. The aspect ratio of the pillar structure of the capacitor or the aspect ratio of the trench structure may be more than 10, so that the performance of the capacitor is better.
Public/Granted literature
- US20200066443A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-02-27
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