Invention Grant
- Patent Title: Plasma processing apparatus and precoating method
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Application No.: US16714189Application Date: 2019-12-13
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Publication No.: US10910200B2Publication Date: 2021-02-02
- Inventor: Yoshiyuki Kikuchi , Akiyoshi Mitsumori
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2016-037831 20160229
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/44 ; C23C16/455 ; C23C16/50

Abstract:
A plasma processing apparatus includes a partition plate, an antenna, and a high frequency power supply. The partition plate has a plurality of holes and partitions an inside of the processing container into a plasma generation chamber and a processing chamber. The antenna generates plasma of the plasma excitation gas supplied into the plasma generation chamber. The high frequency power supply generates plasma of a precoating gas supplied into the plasma generation chamber and introduced into the processing chamber through the plurality of holes of the partition plate. The plasma processing apparatus performs a precoating on a surface of a partition plate on a side of the processing chamber by causing the high frequency power supply to generate plasma of the precoating gas before a plasma processing using the plasma of the plasma excitation gas is performed.
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