Invention Grant
- Patent Title: Method of forming later insulating films for MTJ
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Application No.: US15639682Application Date: 2017-06-30
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Publication No.: US10910215B2Publication Date: 2021-02-02
- Inventor: Naoki Watanabe , Tatsuo Hatano , Shinji Furukawa , Naoyuki Suzuki
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2016-133531 20160705
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C14/56 ; C23C14/50 ; C23C14/34 ; H01L43/12 ; H01L21/28
Abstract:
There is provided a method of forming an insulating film which includes providing a workpiece having a base portion and a protuberance portion formed to protrude from the base portion; and forming an insulating film on the workpiece by sputtering. The forming an insulating film includes forming the insulating film while changing an angle defined between the workpiece and a target.
Public/Granted literature
- US20180012756A1 Method of Forming Insulating Film Public/Granted day:2018-01-11
Information query
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