Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16664455Application Date: 2019-10-25
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Publication No.: US10910260B2Publication Date: 2021-02-02
- Inventor: Wei-Chieh Huang , Chin-Wei Liang , Feng-Jia Shiu , Hsia-Wei Chen , Jieh-Jang Chen , Ching-Sen Kuo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/24 ; H01L27/22 ; H01L45/00 ; H01L21/3105 ; H01L21/66 ; H01L43/12
Abstract:
A method for manufacturing a semiconductor device includes forming a structure protruding from a substrate, forming a dielectric layer covering the structure, forming a dummy layer covering the dielectric layer, and performing a planarization process to completely remove the dummy layer. A material of the dummy layer has a slower removal rate to the planarization process than a material of the dielectric layer.
Public/Granted literature
- US20200058545A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-02-20
Information query
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