Invention Grant
- Patent Title: Semiconductor device, method of manufacturing the same and electronic device including the same
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Application No.: US15720240Application Date: 2017-09-29
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Publication No.: US10910278B2Publication Date: 2021-02-02
- Inventor: Huilong Zhu
- Applicant: Institute of Microelectronics, Chinese Academy of Sciences
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201610872541 20160930
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L29/66 ; H01L29/786 ; H01L29/423 ; B82Y10/00 ; H01L29/06 ; H01L29/267 ; H01L29/417 ; H01L29/775 ; H01L29/10 ; H01L29/78 ; G05B23/02 ; G06T19/00 ; H04N5/232 ; H04N7/18 ; H01L21/02 ; H01L21/3065 ; H01L29/04 ; H01L29/165 ; H01L21/225 ; H01L21/324 ; H01L29/08 ; H01L29/15 ; H01L29/205 ; H01L29/45 ; H01L29/778 ; H01L21/308 ; H01L21/822 ; H01L27/092 ; H04N13/332 ; H04N13/111 ; H04N13/366 ; H04N13/398 ; G06F3/0481 ; G06F3/0482 ; G06K9/00 ; H04N5/247 ; H01L21/3105
Abstract:
A semiconductor device, a method of manufacturing the same and an electronic device including the semiconductor device are provided. According to embodiments, the semiconductor device may include a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked in sequence on the substrate, and a gate stack surrounding a periphery of the channel layer. The channel layer includes a channel region close to its peripheral surface and a body region disposed on an inner side of the channel region.
Public/Granted literature
- US20180097106A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME Public/Granted day:2018-04-05
Information query
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