A method for validating that an integrated circuit die is not susceptible to a conductive metallic ion diffusion defect is disclosed. A test component is applied to a backside surface of the integrated circuit die to form a test assembly. The test component includes a conductive metal layer and a transport media layer for facilitating diffusion of conductive metallic ions. The test assembly is heated at a thermal activation temperature. The integrated circuit die is computer validated to determine whether or not the integrated circuit die has the conductive metallic ion diffusion defect.