Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
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Application No.: US15371554Application Date: 2016-12-07
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Publication No.: US10910284B2Publication Date: 2021-02-02
- Inventor: Stefan Schwab , Herbert Hutter
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015121344 20151208
- Main IPC: H01L23/26
- IPC: H01L23/26 ; H01L23/31 ; H01L21/56 ; H01L23/29 ; H01L23/495 ; H01L23/00

Abstract:
A semiconductor device includes a first semiconductor component having a semiconductor substrate, and a barrier layer disposed at least on or at a portion of the first semiconductor component. The barrier layer includes a polymer material and an organic metal complexing agent covalently bound to the polymer material. In an embodiment, the organic metal complexing agent includes a crown ether and/or cryptand. In an embodiment, the polymer material includes a homopolymer or copolymer resulting from the polymerization of monomers selected from the group consisting of: imides, epoxies, silicones, monomers having functional side chains, methacrylates, and any combinations thereof.
Public/Granted literature
- US20170162461A1 Semiconductor Device and Method of Manufacturing Thereof Public/Granted day:2017-06-08
Information query
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