Invention Grant
- Patent Title: Structures and methods for heat dissipation of semiconductor devices
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Application No.: US15788696Application Date: 2017-10-19
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Publication No.: US10910290B2Publication Date: 2021-02-02
- Inventor: S. L. Chen , Chen-Hsuan Yen , Han-Tang Lo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/522 ; H01L21/768 ; H01L23/498
Abstract:
A semiconductor structure is disclosed. In one example, the semiconductor structure includes: a device region having at least one semiconductor device; a dummy region in contact with the device region; and at least one thermal conductor embedded in the dummy region.
Public/Granted literature
- US20190122951A1 STRUCTURES AND METHODS FOR HEAT DISSIPATION OF SEMICONDUCTOR DEVICES Public/Granted day:2019-04-25
Information query
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