Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16654787Application Date: 2019-10-16
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Publication No.: US10910311B2Publication Date: 2021-02-02
- Inventor: Ki Hong Lee , Ki Hong Yang , Yong Hyun Lim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0025440 20190305
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/11582 ; H01L27/11556
Abstract:
A semiconductor device includes: a first stack structure; a second stack structure; a slit insulating layer located between the first stack structure and the second stack structure, the slit insulating layer extending in a first direction; a conductive plug located between the first stack structure and the second stack structure, the conductive plug including a first protrusion part protruding to the inside of the slit insulating layer; and an insulating spacer surrounding a sidewall of the conductive plug.
Public/Granted literature
- US20200286829A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-09-10
Information query
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