Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16594160Application Date: 2019-10-07
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Publication No.: US10910337B2Publication Date: 2021-02-02
- Inventor: Noriko Okunishi , Toshinori Kiyohara
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2016-211435 20161028
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/29 ; H01L23/31 ; H01L21/56 ; H01L23/00
Abstract:
A performance of a semiconductor device is improved. The semiconductor device according to one embodiment includes a wire that is bonded to one bonding surface at a plurality of parts in an opening formed in an insulating film of a semiconductor chip. The semiconductor device includes also a sealer that seals the semiconductor chip and the wire so that the sealer is in contact with the bonding surface. An area of a part of the bonding surface, the part not overlapping the wire, is small.
Public/Granted literature
- US20200035638A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-30
Information query
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