Invention Grant
- Patent Title: High voltage ESD protection device
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Application No.: US16017978Application Date: 2018-06-25
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Publication No.: US10910362B2Publication Date: 2021-02-02
- Inventor: Ming Qiao , Zhao Qi , Jiamu Xiao , Longfei Liang , Danye Liang , Bo Zhang
- Applicant: University of Electronic Science and Technology of China
- Applicant Address: CN Chengdu
- Assignee: University of Electronic Science and Technology of China
- Current Assignee: University of Electronic Science and Technology of China
- Current Assignee Address: CN Chengdu
- Agency: Bayramoglu Law Offices LLC
- Priority: CN201810275990 20180330
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/10 ; H01L29/78 ; H01L29/08
Abstract:
The present invention provides a high voltage ESD protection device including a P-type substrate; a first NWELL region located on the left of the upper part of the P-type substrate; an NP contact region located on the upper part of the first NWELL region; an N+ contact region located on the right of the upper part of the P-type substrate apart from the first NWELL region; a P+ contact region tangential to the right side of the N+ contact region; a NTOP layer arranged on the right of the NP contact region inside the first NWELL region. The NP contact region is connected to a metal piece to form a metal anode. The N+ contact region and the P+ contact region are connected by a metal piece to form a metal cathode.
Public/Granted literature
- US20190304966A1 High Voltage ESD Protection Device Public/Granted day:2019-10-03
Information query
IPC分类:
