Invention Grant
- Patent Title: Self-heating test structure
-
Application No.: US16535778Application Date: 2019-08-08
-
Publication No.: US10910371B2Publication Date: 2021-02-02
- Inventor: Fei Zhou
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai; CN Beijing
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- Current Assignee Address: CN Shanghai; CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201710331663 20170512
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/82 ; H01L21/765 ; H01L23/34 ; H01L21/762 ; H01L21/66 ; G01R31/28 ; H01L21/8234 ; H01L27/092
Abstract:
A method for detecting heat generated by a semiconductor device including a first MOS device and an active device on a substrate is provided. The method includes obtaining a first curve of a performance parameter of the first MOS device as a function of temperature when the active device is not operating, obtaining a second curve of the performance parameter of the first MOS device as a function of temperature when the active device is operating, and obtaining a heat generating condition of the active device according to a degree of deviation between the first curve and the second curve.
Information query
IPC分类:
