Invention Grant
- Patent Title: Device with large EPI in FinFETs and method of manufacturing
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Application No.: US16032878Application Date: 2018-07-11
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Publication No.: US10910471B2Publication Date: 2021-02-02
- Inventor: Jianwei Peng , Sang Woo Lim , Matthew Wahlquist Stoker , Huang Liu , Jinping Liu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner P.C.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/08 ; H01L21/8238 ; H01L27/092
Abstract:
A method of forming a logic or memory cell with an epi-RSD width of larger than 1.3× fin pitch and the resulting device are provided. Embodiments include a device including a RSD region formed on each of a plurality of fins over a substrate, wherein the RSD has a width larger than 1.3× fin pitch, a TS formed on the RSD, and an ILD formed over the TS.
Public/Granted literature
- US20200020769A1 DEVICE WITH LARGE EPI IN FINFETS AND METHOD OF MANUFACTURING Public/Granted day:2020-01-16
Information query
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