Invention Grant
- Patent Title: Method of manufacturing a silicon wafer
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Application No.: US15189067Application Date: 2016-06-22
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Publication No.: US10910475B2Publication Date: 2021-02-02
- Inventor: Nico Caspary , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014107590 20140528
- Main IPC: H01L29/36
- IPC: H01L29/36 ; C30B15/00 ; C30B29/06 ; H01L29/16 ; H01L29/167 ; H01L29/739 ; H01L29/66 ; H01L29/861 ; H01L29/78 ; H01L29/08 ; C30B15/04 ; C30B15/20 ; C30B33/00

Abstract:
A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.
Public/Granted literature
- US20160305040A1 Method of Manufacturing a Silicon Wafer Public/Granted day:2016-10-20
Information query
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