Invention Grant
- Patent Title: Transistor with multi-metal gate
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Application No.: US16905247Application Date: 2020-06-18
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Publication No.: US10910480B2Publication Date: 2021-02-02
- Inventor: Koon Hoo Teo , Nadim Chowdhury
- Applicant: Mitsubishi Electric Research Laboratories, Inc.
- Applicant Address: US MA Cambridge
- Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee: Mitsubishi Electric Research Laboratories, Inc.
- Current Assignee Address: US MA Cambridge
- Agent Gennadiy Vinokur; James McAleenan; Hironori Tsukamoto
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/16 ; H01L29/20 ; H01L29/778 ; H01L29/47 ; H01L21/04 ; H01L21/28 ; H01L21/306 ; H01L21/3213 ; H01L21/441 ; H01L21/465 ; H01L29/10 ; H01L29/205 ; H01L29/24 ; H01L29/417 ; H01L29/66 ; H01L29/786
Abstract:
A transistor includes a gate electrode with multiple metals distributed along the width of the gate electrode. Each of the metals in the gate electrode has different work functions. Such a compound gate provides higher linearity when, e.g., operated as a radio frequency transistor.
Public/Granted literature
- US20200321443A1 Transistor with Multi-Metal Gate Public/Granted day:2020-10-08
Information query
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