Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16565779Application Date: 2019-09-10
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Publication No.: US10910490B2Publication Date: 2021-02-02
- Inventor: Masahiko Kuraguchi , Yosuke Kajiwara , Aya Shindome , Hiroshi Ono , Daimotsu Kato , Akira Mukai , Toshiki Hikosaka , Jumpei Tajima
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2019-001100 20190108
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/778 ; H01L29/20 ; H01L29/66 ; H01L29/207 ; H01L29/04 ; H01L29/423 ; H01L29/06

Abstract:
According to one embodiment, a semiconductor device includes first to third electrodes, first to fourth semiconductor regions, a first layer including, and a first insulating layer. The first semiconductor region includes Alx1Ga1-x1N and includes first to fifth partial regions. The third partial region includes a first element including at least one selected from the group consisting of Mg, Zn, and C. The second semiconductor region includes Alx2Ga1-x2N and includes a sixth partial region and a seventh partial region. The third semiconductor region includes Alx3Ga1-x3N and includes an eighth partial region and a ninth partial region. The fourth semiconductor region includes Alx4Ga1-x4N and includes a tenth partial region and an eleventh partial region. The first layer includes AlyGa1-yN and includes a first portion provided between the third partial region and the third electrode. The first insulating layer includes a second portion provided between the first portion and the third electrode.
Public/Granted literature
- US20200220003A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-09
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