A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first body region disposed in a substrate and having a first conductivity type, a second body region disposed on the first body region and having the first conductivity type and a portion protruding in a channel length direction, a source region disposed in the second body region and having a second conductivity type, a drain region spaced apart from the protruding portion of the second body region in the channel length direction and having the second conductivity type, a well region configured to electrically connect the protruding portion of the second body region and the drain region and having the second conductivity type, and a gate structure disposed on the protruding portion of the second body region.