Invention Grant
- Patent Title: Thin film transistors with epitaxial source/drain and drain field relief
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Application No.: US16559090Application Date: 2019-09-03
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Publication No.: US10910495B2Publication Date: 2021-02-02
- Inventor: Bahman Hekmatshoartabari , Ghavam G. Shahidi , Marinus P.J. Hopstaken
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G02F1/1362 ; H01L21/02 ; C30B23/02 ; H01L29/66 ; H01L29/786
Abstract:
A method for manufacturing a semiconductor device includes forming a semiconductor layer on an insulating layer, epitaxially growing a first layer on the semiconductor layer, wherein the first layer has a first doping concentration, epitaxially growing a second layer on the semiconductor layer, wherein the second layer has a second doping concentration higher than the first doping concentration, forming a gate dielectric over an active region of the semiconductor layer, forming a gate electrode on the gate dielectric, and forming a plurality of source/drain contacts to the second layer, wherein the first and second layers comprise crystalline hydrogenated silicon (c-Si:H).
Public/Granted literature
- US20200006555A1 THIN FILM TRANSISTORS WITH EPITAXIAL SOURCE/DRAIN AND DRAIN FIELD RELIEF Public/Granted day:2020-01-02
Information query
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