Invention Grant
- Patent Title: Apparatus and methods of fabricating a magneto-resistive random access memory (MRAM) device
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Application No.: US16570492Application Date: 2019-09-13
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Publication No.: US10910557B2Publication Date: 2021-02-02
- Inventor: Chi Ching , Renu Whig , Rongjun Wang
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/10 ; H01L43/02 ; H01L27/22 ; H01F41/32 ; H01F10/32 ; G11C11/16
Abstract:
Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.
Public/Granted literature
- US20200091420A1 APPARATUS AND METHODS OF FABRICATING A MAGNETO-RESISTIVE RANDOM ACCESS MEMORY (MRAM) DEVICE Public/Granted day:2020-03-19
Information query
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