Invention Grant
- Patent Title: Method for manufacturing light-emitting device
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Application No.: US16925781Application Date: 2020-07-10
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Publication No.: US10910597B2Publication Date: 2021-02-02
- Inventor: Shunpei Yamazaki , Kaoru Hatano
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-122664 20090521
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L51/56 ; H01L51/00 ; H01L27/32

Abstract:
An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.
Public/Granted literature
- US20200343482A1 METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE Public/Granted day:2020-10-29
Information query
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