Invention Grant
- Patent Title: Microelectronic device
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Application No.: US16180865Application Date: 2018-11-05
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Publication No.: US10910667B2Publication Date: 2021-02-02
- Inventor: Sami Oukassi , Xavier Baillin
- Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1560637 20151106
- Main IPC: H01M10/0525
- IPC: H01M10/0525 ; B32B3/30 ; C03C27/00 ; C03C17/02 ; C03C3/16 ; B81C3/00 ; H01M4/04 ; B32B7/12 ; H01M10/058 ; H01M4/08 ; H01M4/58 ; H01M6/14

Abstract:
This invention relates to a microelectronic device comprising: a first support, a second support, first respective faces of the first support and second support being arranged opposite, and a sealing layer between said first faces, characterized in that the sealing layer comprises at least one layer of an ionic conductive material of formula LixPyOzNw, with x strictly greater than 0 and less than or equal to 4.5, y strictly greater than 0 and less than or equal to 1, z strictly greater than 0 and less than or equal to 5.5, w greater than or equal to 0 and less than or equal to 1.
Public/Granted literature
- US20190074540A1 MICROELECTRONIC DEVICE Public/Granted day:2019-03-07
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