Invention Grant
- Patent Title: Hybrid silicon lasers on bulk silicon substrates
-
Application No.: US16431344Application Date: 2019-06-04
-
Publication No.: US10910792B2Publication Date: 2021-02-02
- Inventor: Dong-jae Shin , Dong-hyun Kim , Seong-gu Kim , In-sung Joe , Kyoung-ho Ha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0132019 20140930
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/20 ; G02B6/12 ; H01S5/10 ; H01S5/22 ; H01S5/026 ; H01S5/042 ; H01S5/14 ; H01S5/223 ; H01S5/227 ; H01S5/343

Abstract:
Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.
Public/Granted literature
- US20190288485A1 Hybrid Silicon Lasers on Bulk Silicon Substrates Public/Granted day:2019-09-19
Information query