Invention Grant
- Patent Title: GaN circuit drivers for GaN circuit loads
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Application No.: US16550272Application Date: 2019-08-25
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Publication No.: US10910843B2Publication Date: 2021-02-02
- Inventor: Daniel M. Kinzer , Santosh Sharma , Ju Zhang
- Applicant: NAVITAS SEMICONDUCTOR, INC.
- Applicant Address: US CA El Segundo
- Assignee: NAVITAS SEMICONDUCTOR, INC.
- Current Assignee: NAVITAS SEMICONDUCTOR, INC.
- Current Assignee Address: US CA El Segundo
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02M3/158 ; H01L25/07 ; H02M3/157 ; H01L27/088 ; H02J7/00 ; H01L23/495 ; H01L23/62 ; H02M1/088 ; H03K3/012 ; H01L29/20 ; H03K17/10 ; H03K19/0185 ; H03K3/356 ; H01L23/528 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H02M1/00 ; H02M3/155

Abstract:
An electronic circuit is disclosed. The electronic circuit includes a GaN substrate, a first power supply node on the substrate, an output node, a signal node, and an output component on the substrate, where the output component is configured to generate a voltage at the output node based at least in part on a voltage at the signal node. The electronic circuit also includes a capacitor coupled to the signal node, where, the capacitor is configured to selectively cause the voltage at the signal node to be greater than the voltage of the first power supply node, such that the output component causes the voltage at the output node to be substantially equal to the voltage of the first power supply node.
Public/Granted literature
- US20190386503A1 GaN CIRCUIT DRIVERS FOR GaN CIRCUIT LOADS Public/Granted day:2019-12-19
Information query
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