Invention Grant
- Patent Title: Method of fabricating MEMS devices using plasma etching and device therefor
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Application No.: US14658114Application Date: 2015-03-13
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Publication No.: US10913653B2Publication Date: 2021-02-09
- Inventor: Ben (Wen-Pin) Chuang , M H (Ming-Hong) Kuo , W J (Wen-Chih) Chen , Tse-Hsi “Terrence” Lee
- Applicant: MCube Inc.
- Applicant Address: US CA San Jose
- Assignee: MCube Inc.
- Current Assignee: MCube Inc.
- Current Assignee Address: US CA San Jose
- Agency: Ogawa P.C.
- Agent Richard T. Ogawa
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00

Abstract:
A method for fabricating a MEMS sensor device. The method can include providing a substrate, forming an IC layer overlying the substrate, forming an oxide layer overlying the IC layer, forming a metal layer coupled to the IC layer through the oxide layer, forming a MEMS layer having a pair of designated sense electrode portions and a designated proof mass portion overlying the oxide layer, forming a via structure within each of the designated sense electrode portions, and etching the MEMS layer to form a pair of sense electrodes and a proof mass from the designated sense electrode portions and proof mass portions, respectively. The via structure can include a ground post and the proof mass can include a sense comb. The MEMS sensor device formed using this method can result is more well-defined edges of the proof mass structure.
Public/Granted literature
- US20160257559A1 METHOD OF FABRICATING MEMS DEVICES USING PLASMA ETCHING AND DEVICE THEREFOR Public/Granted day:2016-09-08
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