Invention Grant
- Patent Title: Substrate processing apparatus having gas guide capable of suppressing gas diffusion
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Application No.: US16141563Application Date: 2018-09-25
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Publication No.: US10914005B2Publication Date: 2021-02-09
- Inventor: Takashi Yahata
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JP2016-040011 20160302
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/44 ; H01L21/673 ; H01L21/67 ; C23C16/54 ; H01L21/677

Abstract:
A technique that improves a quality of substrate processing. A substrate processing apparatus includes: a plurality of processing chambers and transfer chambers; a vacuum transfer chamber; a plurality of gate valves; a plurality of first gas supply units to supply an inert gas to a substrate; a transfer robot; and a control unit to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is a second distance greater than the first distance when the substrate passes through the plurality of gate valves.
Public/Granted literature
- US20190032213A1 SUBSTRATE PROCESSING APPARATUS CAPABLE OF ADJUSTING FLOW RATE OF INERT GAS SUPPLIED TO SUBSTRATE Public/Granted day:2019-01-31
Information query
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