Invention Grant
- Patent Title: Semiconductor device and power monitoring method therefor
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Application No.: US16146952Application Date: 2018-09-28
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Publication No.: US10914769B2Publication Date: 2021-02-09
- Inventor: Toshiki Yamahira , Masahiro Sakai
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-228570 20171129
- Main IPC: G01R19/25
- IPC: G01R19/25 ; H03K21/38 ; H02H1/00 ; H02H3/42 ; H03K21/08 ; H02H3/08 ; H02M1/00 ; H02H3/20 ; H02H3/10

Abstract:
According to an aspect of a present invention, there is provided a semiconductor device including a first power monitoring device and a second power monitoring device. The first power monitoring device outputs first operating power that is to be supplied to a second control section. The second power monitoring device outputs second operating power that is to be supplied to a first control section. Based on a first setting given from the first control section, a first power monitoring circuit autonomously verifies whether the second operating power is normal, and periodically transmits the result of verification to the second control section as first error information. Based on a second setting given from the second control section, a second power monitoring circuit autonomously verifies whether the first operating power is normal, and periodically transmits the result of verification to the first control section as second error information.
Public/Granted literature
- US20190162760A1 SEMICONDUCTOR DEVICE AND POWER MONITORING METHOD THEREFOR Public/Granted day:2019-05-30
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