Invention Grant
- Patent Title: Methods and apparatuses for threshold voltage measurement and related semiconductor devices and systems
-
Application No.: US16227348Application Date: 2018-12-20
-
Publication No.: US10914780B2Publication Date: 2021-02-09
- Inventor: Binoy Jose Panakkal , Rajesh N. Gupta
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G05F3/26 ; G01R19/165 ; H03F3/50 ; H03K19/0948

Abstract:
A measurement circuit may include a transistor having a first terminal, a second terminal, and a third terminal, wherein the first terminal is coupled to a first reference voltage. The measurement circuit may further include a first operational amplifier including a first input coupled to the second terminal of the transistor and an output coupled to the third terminal of the transistor. The first operational amplifier may further include a second input configured to receive a second reference voltage. The measurement circuit may also include a first unity-gain voltage follower including a second operational amplifier having a first input coupled to the first input of the first operational amplifier. Methods of measuring a threshold voltage, semiconductor devices, and electronic systems are also described.
Information query