Invention Grant
- Patent Title: Bandwidth boosted stacked memory
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Application No.: US16439613Application Date: 2019-06-12
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Publication No.: US10915451B2Publication Date: 2021-02-09
- Inventor: Krishna T. Malladi , Mu-Tien Chang , Dimin Niu , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/0879 ; G11C11/417

Abstract:
A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.
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