Invention Grant
- Patent Title: Metallic magnetic memory devices for cryogenic operation and methods of operating the same
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Application No.: US16902641Application Date: 2020-06-16
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Publication No.: US10916284B2Publication Date: 2021-02-09
- Inventor: Quang Le , Zhanjie Li , Zhigang Bai , Paul Vanderheijden , Michael Ho
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/02 ; H01L27/22 ; H01L43/10 ; G11C11/18
Abstract:
A MRAM device includes a spin valve containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer located between the reference layer and the free layer, a metallic assist structure configured to provide rotating spin transfer torque to the free layer to assist the free layer switching during programming, and a first nonmagnetic metallic spacer layer located between the free layer and the metallic assist structure.
Public/Granted literature
- US20200312394A1 METALLIC MAGNETIC MEMORY DEVICES FOR CRYOGENIC OPERATION AND METHODS OF OPERATING THE SAME Public/Granted day:2020-10-01
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