A semiconductor storage device comprises a memory cell, a write word line and a read word line connected to the memory cell, first and second write bit lines connected to the memory cell, first and second read bit lines connected to the memory cell, a precharge circuit, and a sense amplifier circuit. The precharge circuit is configured to charge, before reading from the memory cell, the first read bit line to a first potential and the second read bit line to a second potential lower than the first potential. The sense amplifier circuit is configured to amplify a difference in potential between the first read bit line and the second read bit line during the reading from the memory cell and output a signal corresponding to the difference in potential as a read value.