Invention Grant
- Patent Title: Nonvolatile memory device
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Application No.: US16779484Application Date: 2020-01-31
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Publication No.: US10916315B2Publication Date: 2021-02-09
- Inventor: Seung Woo Yu , Sang Lok Kim , Byung Kwan Chun , Byung Hoon Jeong , Jeong Don Ihm , Young Don Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2019-0015298 20190211
- Main IPC: G11C16/32
- IPC: G11C16/32 ; G11C7/10 ; G11C7/22

Abstract:
A nonvolatile memory device includes a first memory cell array, a first bi-directional multiplexer, a first register, a second register, a first I/O pad and a second I/O pad. The first memory cell array stores first data. The first bi-directional multiplexer receives the first data and distributes the first data into first sub-data and second sub-data. The first register stores first sub-data from the first bi-directional multiplexer. The second register stores second sub-data from a second bi-directional multiplexer. The first I/O pad outputs the first sub-data from the first register to outside. The second I/O pad outputs the second sub-data from the second register to the outside.
Public/Granted literature
- US20200258583A1 NONVOLATILE MEMORY DEVICE Public/Granted day:2020-08-13
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