Invention Grant
- Patent Title: High temperature annealing in X-ray source fabrication
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Application No.: US16282143Application Date: 2019-02-21
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Publication No.: US10916400B2Publication Date: 2021-02-09
- Inventor: Yong Liang , Vance Scott Robinson
- Applicant: Baker Hughes, A GE Company, LLC
- Applicant Address: US TX Houston
- Assignee: Baker Hughes, A GE Company, LLC
- Current Assignee: Baker Hughes, A GE Company, LLC
- Current Assignee Address: US TX Houston
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, PC
- Agent Lisa Adams
- Main IPC: H01J35/08
- IPC: H01J35/08

Abstract:
The present disclosure relates to multi-layer X-ray sources having decreased hydrogen within the layer stack and/or tungsten carbide inter-layers between the primary layers of X-ray generating and thermally-conductive materials. The resulting multi-layer target structures allow increased X-ray production, which may facilitate faster scan times for inspection or examination procedures.
Public/Granted literature
- US20190189385A1 HIGH TEMPERATURE ANNEALING IN X-RAY SOURCE FABRICATION Public/Granted day:2019-06-20
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