Invention Grant
- Patent Title: Semiconductor wafer with modified surface and fabrication method thereof
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Application No.: US16171950Application Date: 2018-10-26
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Publication No.: US10916416B2Publication Date: 2021-02-09
- Inventor: Yao-Wen Hsu , Ching-Hung Kao , Po-Jen Wang , Tsung-Han Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/683 ; H01L21/687 ; H01L21/67 ; H01L21/22 ; H01L27/12

Abstract:
A semiconductor wafer and a semiconductor wafer fabrication method are provided. The wafer includes a supporting substrate, a semiconductor substrate and a contact layer. The supporting substrate has a first surface and a second surface opposite to the first surface. The semiconductor substrate is disposed on the first surface of the supporting substrate, in which the semiconductor substrate is configured to form plural devices. The contact layer is disposed on the second surface of the supporting substrate to contact the supporting substrate, in which the contact layer is configured to contact an electrostatic chuck and has a resistivity of the contact layer smaller than a resistivity of the supporting substrate. In semiconductor wafer fabrication method, at first, a raw wafer is provided. Then, the contact layer is formed by using an implantation operation or a deposition operation.
Public/Granted literature
- US20190148127A1 SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER FABRICATION METHOD Public/Granted day:2019-05-16
Information query
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