Invention Grant
- Patent Title: Processing method and plasma processing apparatus
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Application No.: US16555633Application Date: 2019-08-29
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Publication No.: US10916420B2Publication Date: 2021-02-09
- Inventor: Masahiro Tabata , Toru Hisamatsu , Maju Tomura , Sho Kumakura , Hironari Sasagawa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2018-109678 20180607
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01J37/32 ; H01L21/683 ; H01L21/67 ; H01L21/311 ; C23C16/50 ; C23C16/455 ; C23C16/02 ; C23C16/56 ; C23C16/46
Abstract:
A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
Public/Granted literature
- US20190393031A1 PROCESSING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2019-12-26
Information query
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