Invention Grant
- Patent Title: Buffer layers having composite structures
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Application No.: US16179419Application Date: 2018-11-02
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Publication No.: US10916422B2Publication Date: 2021-02-09
- Inventor: Kaixuan Chen , Wei Jiang , Zhiwei Lin , Xiangjing Zhuo , Tianzu Fang , Yang Wang , Jichu Tong
- Applicant: Xiamen Changelight Co., Ltd.
- Applicant Address: CN Xiamen
- Assignee: Xiamen Changelight Co., Ltd.
- Current Assignee: Xiamen Changelight Co., Ltd.
- Current Assignee Address: CN Xiamen
- Agency: Arch & Lake LLP
- Priority: CN201610117134 20160302
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L31/0392 ; H01L33/12 ; C30B29/40 ; C30B25/18 ; H01L33/00 ; H01L33/32

Abstract:
Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as a method of manufacturing such wafer of material stack. A material stack according to the disclosed technology includes a substrate; a basis buffer layer of a first material disposed above the substrate; and a plurality of composite buffer layers disposed above the basis buffer layer sequentially along a growth direction. The growth direction is from the substrate to a last composite buffer layer of the plurality of composite buffer layers. Each composite buffer layer except the last composite buffer layer includes a first buffer sublayer of the first material, and a second buffer sublayer of a second material disposed above the first buffer sublayer. The thicknesses of the first buffer sublayers of the composite buffer layers decrease along the growth direction.
Public/Granted literature
- US20190088476A1 BUFFER LAYERS HAVING COMPOSITE STRUCTURES Public/Granted day:2019-03-21
Information query
IPC分类: