- Patent Title: Paste composition and method for forming silicon germanium layer
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Application No.: US15762321Application Date: 2016-09-16
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Publication No.: US10916423B2Publication Date: 2021-02-09
- Inventor: Marwan Dhamrin , Shota Suzuki , Ken Kikuchi , Masahiro Nakahara , Naoya Morishita
- Applicant: TOYO ALUMINIUM KABUSHIKI KAISHA
- Applicant Address: JP Osaka
- Assignee: TOYO ALUMINIUM KABUSHIKI KAISHA
- Current Assignee: TOYO ALUMINIUM KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2015-187017 20150924
- International Application: PCT/JP2016/077439 WO 20160916
- International Announcement: WO2017/051775 WO 20170330
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/208 ; H01L21/20 ; H01B1/22 ; H01L21/324 ; C09D11/52
Abstract:
This invention provides a paste composition that enables a silicon germanium layer to be formed safely and easily, and a method for forming a silicon germanium layer safely and easily. The present invention provides a paste composition for forming a silicon germanium layer, the composition comprising aluminum and germanium, wherein the content of the germanium is more than 1 part by mass and 10000 parts by mass or less, per 100 parts by mass of the aluminum.
Public/Granted literature
- US20180301334A1 PASTE COMPOSITION AND METHOD FOR FORMING SILICON GERMANIUM LAYER Public/Granted day:2018-10-18
Information query
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