Invention Grant
- Patent Title: Methods for forming graded wurtzite III-nitride alloy layers
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Application No.: US16764192Application Date: 2018-12-04
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Publication No.: US10916424B2Publication Date: 2021-02-09
- Inventor: Xiaohang Li , Kaikai Liu
- Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Patent Portfolio Builders PLLC
- International Application: PCT/IB2018/059631 WO 20181204
- International Announcement: WO2019/111153 WO 20190613
- Main IPC: C30B23/00
- IPC: C30B23/00 ; H01L21/02 ; C23C16/34 ; C30B23/02 ; C30B29/40
Abstract:
A method for forming a semiconductor device comprising a graded wurtzite III-nitride alloy layer, including a wurtzite III-nitride alloy, on a second layer. A polarization doping concentration profile is selected for the graded wurtzite III-nitride alloy layer based on an intended function of the semiconductor device. Based on the selected polarization doping concentration profile for the graded wurtzite III-nitride alloy layer, a composition-polarization change rate of the graded wurtzite III-nitride alloy layer and a grading speed of the graded wurtzite III-nitride alloy layer are determined. The composition-polarization change rate and grading speed are based on a composition of first and second elements of the wurtzite III-nitride alloy. The graded wurtzite III-nitride alloy layer is formed on the second layer having the selected polarization doping concentration profile using the determined composition-polarization change rate and grading speed to adjust the composition of the first and second III-nitride elements of the wurtzite III-nitride alloy based on a current position in the graded wurtzite III-nitride alloy layer from the second layer.
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