Invention Grant
- Patent Title: Spacer-damage-free etching
-
Application No.: US16396463Application Date: 2019-04-26
-
Publication No.: US10916443B2Publication Date: 2021-02-09
- Inventor: Tsung-Min Huang , Chung-Ju Lee , Yung-Hsu Wu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/768 ; H01L21/033 ; H01L21/308 ; H01L21/02 ; H01L21/027
Abstract:
A method of patterning a semiconductor device is disclosed. A tri-layer photoresist is formed over a plurality of patterned features. The tri-layer photoresist includes a bottom layer, a middle layer disposed over the bottom layer, and a top layer disposed over the middle layer, the top layer containing a photo-sensitive material. The top layer is patterned via a photolithography process, the patterned top layer including an opening. The opening is extended into the bottom layer by etching the bottom layer and continuously forming a protective layer on etched surfaces of the bottom layer and on exposed surfaces of the patterned features. The bottom layer is removed. At least some portions of the protective layer remain on the exposed surfaces of the patterned features after the bottom layer is removed.
Public/Granted literature
- US20190252204A1 SPACER-DAMAGE-FREE ETCHING Public/Granted day:2019-08-15
Information query
IPC分类:
