Invention Grant
- Patent Title: Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device
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Application No.: US16328692Application Date: 2017-12-26
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Publication No.: US10916480B2Publication Date: 2021-02-09
- Inventor: Tomoyuki Sasaki , Tatsuo Shibata
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2017-080413 20170414
- International Application: PCT/JP2017/046623 WO 20171226
- International Announcement: WO2018/189964 WO 20181018
- Main IPC: H01L21/8239
- IPC: H01L21/8239 ; H01L27/105 ; H01L43/10 ; H01L43/08 ; H01L29/82
Abstract:
A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.
Public/Granted literature
Information query
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