Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16103186Application Date: 2018-08-14
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Publication No.: US10916502B2Publication Date: 2021-02-09
- Inventor: Hsin-Hung Chen , Min-Feng Kao , Hsing-Chih Lin , Jen-Cheng Liu , Dun-Nian Yaung
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/528 ; H01L23/522 ; H01L21/02 ; H01L21/768 ; H01L21/306

Abstract:
A semiconductor device includes a semiconductor substrate, an underlying insulation layer, a conductive via and a sidewall insulation layer. The underlying insulation layer is over the semiconductor substrate. The conductive via is through the semiconductor substrate and the underlying insulation layer. The sidewall insulation layer is between the semiconductor substrate and the conductive via. The sidewall insulation layer includes a protrusion stopping at an interface between the semiconductor substrate and the underlying insulation layer, and protruding outwardly into the semiconductor substrate.
Public/Granted literature
- US20190013270A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-01-10
Information query
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