Invention Grant
- Patent Title: Semiconductor device, and method of manufacturing the same
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Application No.: US15575522Application Date: 2016-06-01
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Publication No.: US10916520B2Publication Date: 2021-02-09
- Inventor: Kiyoshi Ishida , Makoto Kimura , Katsumi Miyawaki , Yukinobu Tarui , Keiko Shirafuji
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2015-117505 20150610
- International Application: PCT/JP2016/066155 WO 20160601
- International Announcement: WO2016/199634 WO 20161215
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/055 ; H01L21/50 ; H01L23/10 ; H01L23/04

Abstract:
A semiconductor device includes a substrate, a semiconductor element, a ground pad, an insulating coating member, a conductive bonding member, and a conductive cap. The inner peripheral end of a bottom of the conductive cap is disposed at a side close to the inner periphery of the insulating coating member relative to the outer peripheral end of the insulating coating member. The bottom has a shape in which the distance between the main surface and itself decreases continuously from its outer peripheral end toward its inner peripheral end.
Public/Granted literature
- US20180158794A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-06-07
Information query
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