Invention Grant
- Patent Title: Tight integrated vertical transistor dual diode structure for electrostatic discharge circuit protector
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Application No.: US16020134Application Date: 2018-06-27
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Publication No.: US10916537B2Publication Date: 2021-02-09
- Inventor: Karthik Balakrishnan , Bahman Hekmatshoartabari , Alexander Reznicek , Jeng-Bang Yau
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent L. Jeffrey Kelly
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/06 ; H01L29/16 ; H01L29/20 ; H01L29/66 ; H01L29/861 ; H01L29/45 ; H01L29/78
Abstract:
An electric static discharge (ESD) diode pair is disclosed. The first diode of the device includes a first diode junction portion having vertically orientated and horizontally oriented portions of a first conductivity and a second diode junction portion of a second conductivity in direct contact with both of the vertically orientated and horizontally orientated portions of the first diode junction portion. The second diode of the device includes a first diode junction portion having vertically orientated and horizontally oriented portions of a second conductivity and a second diode junction portion having a first conductivity in direct contact with both of the vertically orientated and horizontally orientated portions of the first diode junction portion. A common electrical contact is in direct contact first diode junction portion for each of the first diode and the second diode.
Public/Granted literature
- US20180308835A1 TIGHT INTEGRATED VERTICAL TRANSISTOR DUAL DIODE STRUCTURE FOR ELECTROSTATIC DISCHARGE CIRCUIT PROTECTOR Public/Granted day:2018-10-25
Information query
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