Invention Grant
- Patent Title: Nanosheet-CMOS EPROM device with epitaxial oxide charge storage region
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Application No.: US16050810Application Date: 2018-07-31
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Publication No.: US10916629B2Publication Date: 2021-02-09
- Inventor: Alexander Reznicek , Jeng-Bang Yau , Tak H. Ning , Ghavam G. Shahidi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/8238 ; H01L29/792 ; H01L27/11568 ; H01L29/66 ; H01L27/092 ; H01L29/06
Abstract:
A semiconductor structure that occupies only one areal device area is provided that includes a charge storage region sandwiched between a pFET nanosheet device and an nFET nanosheet device. The charge storage region is an epitaxial oxide nanosheet that is lattice matched to an underlying first silicon channel material nanosheet and an overlying second silicon channel material nanosheet. The semiconductor structure can be used as an EPROM device.
Public/Granted literature
- US20200044028A1 NANOSHEET-CMOS EPROM DEVICE WITH EPITAXIAL OXIDE CHARGE STORAGE REGION Public/Granted day:2020-02-06
Information query
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