Invention Grant
- Patent Title: Body contact in fin field effect transistor design
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Application No.: US16794473Application Date: 2020-02-19
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Publication No.: US10916651B2Publication Date: 2021-02-09
- Inventor: Alexander Reznicek , Tak H. Ning , Jeng-Bang Yau , Bahman Hekmatshoartabari
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Robert Sullivan
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/28 ; H01L21/311 ; H01L29/423
Abstract:
A method for forming the semiconductor device that includes forming a gate opening to a channel region of a fin structure; and forming a dielectric layer on the fin structure, in which an upper portion of the fin structure is exposed. A metal is formed within the gate opening. The portions of the metal directly contacting the upper surface of fin structure provide a body contact. The combination of the metal within the gate opening to the channel region of the fin structure and the dielectric layer provide a functional gate structure to the semiconductor device.
Public/Granted literature
- US20200185516A1 BODY CONTACT IN FIN FIELD EFFECT TRANSISTOR DESIGN Public/Granted day:2020-06-11
Information query
IPC分类:
