Invention Grant
- Patent Title: Asymmetric threshold voltage FinFET device by partial channel doping variation
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Application No.: US16134543Application Date: 2018-09-18
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Publication No.: US10916659B2Publication Date: 2021-02-09
- Inventor: Alexander Reznicek , Choonghyun Lee , Pouya Hashemi , Takashi Ando , Jingyun Zhang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent L. Jeffrey Kelly, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/265 ; H01L29/08 ; H01L21/308 ; H01L29/10
Abstract:
A FinFET having an asymmetric threshold voltage distribution is provided by forming a halo ion implantation region in a semiconductor fin, and in close proximity to a source region, of the FinFET. The halo ion implantation region is self-aligned to an outermost sidewall surface of the functional gate structure of the FinFET and it has a higher dopant concentration than the remaining portion of the channel region.
Public/Granted literature
- US20200091344A1 ASYMMETRIC THRESHOLD VOLTAGE FINFET DEVICE BY PARTIAL CHANNEL DOPING VARIATION Public/Granted day:2020-03-19
Information query
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