Invention Grant
- Patent Title: Vertical transistor with a body contact for back-biasing
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Application No.: US16034828Application Date: 2018-07-13
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Publication No.: US10916660B2Publication Date: 2021-02-09
- Inventor: Veeraraghavan S. Basker , Kangguo Cheng , Theodorus E. Standaert , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Robert Sullivan
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/78 ; H01L29/423 ; H01L27/12 ; H01L29/10 ; H01L29/08 ; H01L21/28 ; H01L21/306 ; H01L21/308 ; H01L21/768 ; H01L23/535 ; H01L29/06 ; H01L29/417
Abstract:
A method of forming a substrate contact in a vertical transistor device includes patterning a sacrificial layer to form an opening in the sacrificial layer, the sacrificial layer disposed on hardmask arranged on a substrate, and the substrate including a bulk semiconductor layer, a buried oxide layer arranged on the bulk semiconductor layer, and a semiconductor layer arranged on the buried oxide layer; forming oxide spacers on sidewalls of the opening in the sacrificial layer; using the oxide spacers as a pattern to etch a trench through the substrate, the trench stopping at a region within the bulk semiconductor layer; and depositing a conductive material in the trench to form the substrate contact.
Public/Granted literature
- US20180337059A1 VERTICAL TRANSISTOR WITH A BODY CONTACT FOR BACK-BIASING Public/Granted day:2018-11-22
Information query
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