Invention Grant
- Patent Title: Non-volatile memory and manufacturing method for the same
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Application No.: US17026207Application Date: 2020-09-19
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Publication No.: US10916664B2Publication Date: 2021-02-09
- Inventor: Geeng-Chuan Chern
- Applicant: NEXCHIP SEMICONDUCTOR CO., LTD.
- Applicant Address: CN Anhui
- Assignee: NEXCHIP SEMICONDUCTOR CO., LTD.
- Current Assignee: NEXCHIP SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Anhui
- Agency: Global IP Services
- Agent Tianhua Gu
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/78 ; H01L29/423 ; H01L27/11517 ; H01L21/265 ; H01L21/762 ; H01L21/3213 ; H01L21/02 ; H01L21/283 ; H01L29/66
Abstract:
The present invention provides a non-volatile memory and a manufacturing method for the same. In the non-volatile memory, a floating gate structure has a first sharp portion and a second sharp portion, and a corner formed by a side surface of the floating gate structure and a part of a top surface of the floating gate structure is not covered by a control gate structure. The corner is connected between the first sharp portion and one end of the second sharp portion. A tunneling dielectric layer of an erasing gate structure covers the first sharp portion, the second sharp portion, and a tip part of the corner.
Public/Granted literature
- US20210005745A1 NON-VOLATILE MEMORY AND MANUFACTURING METHOD FOR THE SAME Public/Granted day:2021-01-07
Information query
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