Provided is a semiconductor device including: a semiconductor layer of a first conductivity type provided on the semiconductor substrate; a first main electrode provided on the semiconductor layer; a second main electrode provided on a main surface of the semiconductor substrate, opposite to a side on which the first main electrode is provided; an electric field limiting region of a second conductivity type provided in an outside terminal end region on an outer peripheral side of the semiconductor device, a first protective film covering at least the electric field limiting region; a protective metal film provided on a portion from an outside end edge portion of the first protective film to a front surface of the semiconductor layer; and a second protective film provided covering portions on an end edge portion of the first main electrode, the first protective film, and the protective metal film.