Invention Grant
- Patent Title: Semiconductor device including a boost circuit for controlling switches in a battery pack
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Application No.: US16193641Application Date: 2018-11-16
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Publication No.: US10916959B2Publication Date: 2021-02-09
- Inventor: Kohei Kawano , Tsuyoshi Ota
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-246715 20171222
- Main IPC: H02J7/00
- IPC: H02J7/00 ; H02M3/07

Abstract:
A semiconductor device capable of turning a discharge control transistor off faster while maintaining safety is provided. A control unit, in discharge stopping processing, turns a switching element on and executes a first discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn via a load and, at a predetermined discharge-stopping mode switching timing, switches to a second discharge-stopping mode in which the gate voltage of the discharge control transistor is withdrawn directly to a low-voltage power source.
Public/Granted literature
- US20190199103A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-06-27
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