Invention Grant
- Patent Title: Self-adaptive termination impedance circuit
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Application No.: US16674348Application Date: 2019-11-05
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Publication No.: US10917093B1Publication Date: 2021-02-09
- Inventor: Yuan He
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H03K19/003
- IPC: H03K19/003 ; H03K19/00 ; G11C7/10 ; G11C11/4093
Abstract:
A memory system includes a memory device with a termination circuit providing a termination impedance for a data signal in the memory device. The device also includes a calibration circuit configured to set the termination impedance to a predetermined value. The device further includes an impedance adjustment circuit configured to adjust the termination impedance based on a feedback signal indicating a change in the termination impedance due to at least one of a change in a temperature of the memory device or a change in voltage of a voltage bus in the memory device.
Information query
